General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® S series is optimized for its switching characteristics to achieve aggressive EMI standards. It is easy to use for smaller power supply systems to meet the both efficiency and EMI standards.
Features
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|
Applications
|
|
Key Performance Parameters
|
Parameter |
Value |
Unit |
|
VDS, min @ Tj(max) |
700 |
V |
|
ID, pulse |
38 |
A |
|
RDS(ON), max @ VGS =10V |
250 |
mΩ |
|
Qg |
39 |
nC |
Marking Information
|
Product Name |
Package |
Marking |
|
OSG70R250KSF |
TO247-L |
OSG70R250KS |
Package & Pin Information
Performance Parameters
Package
TO-263
Cfg.
N
VDS (V)
700
VGS (V)
30
ID (A) && Tc=25℃
17
Vth_typ(V)
3.9
Ron (Ω) && 10V
0.25
Ron (Ω) && 4.5V
0.17
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文件大小: 906.3KB
工业连接器
工业连接器
