General Description
OST40N80HF uses advanced Oriental-Semi’s patented Trident-Gate Bipolar Transistor (TGBT) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance.
This device is suitable for PFC applications and induction heating circuits.
Features
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|
Applications
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|
Key Performance Parameters
Parameter |
Value |
Unit |
|
VCES, min @ 25°C |
650 |
V |
|
Maximum junction temperature |
175 |
°C |
|
IC, pulse |
200 |
A |
|
VCE(sat), typ @ |
VGE =15V |
1.45 |
V |
Qg |
110 |
nC |
Marking Information
Product Name |
Package |
Marking |
OST40N80H |
TO247 |
OST40N80H |
Package & Pin Information
Performance Parameters
Package
TO-247
VGE (V)
20
BV (V)
800
IC (A) && Tc=25℃
80
Vth_typ(V)
3.5
Von(V) && Vcesat
1.65
Von(V) && Vf
1.65
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文件大小: 919.5KB