General Description
OST20N135HRF uses advanced Oriental-Semi’s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance.
This device is suitable for resonant induction heating applications.
Features
|
|
Applications
|
|
Key Performance Parameters
|
Parameter |
Value |
Unit |
|
VCES, min @ 25°C |
650 |
V |
|
Maximum junction temperature |
175 |
°C |
|
VCE(sat), typ @ VGE=15V |
1.5 |
mΩ |
|
Qg |
54 |
nC |
Marking Information
|
Product Name |
Package |
Marking |
|
OST20N135HRF |
TO220F |
OST20N135HR |
Package & Pin Information
Performance Parameters
Package
TO-247
VGE (V)
20
BV (V)
1350
IC (A) && Tc=25℃
40
Vth_typ(V)
5.8
Von(V) && Vcesat
1.8
Von(V) && Vf
1.7
-
文件大小: 706.6KB
工业连接器
工业连接器
