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General Description

The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. 
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.

 

Features       

  • Low RDS(ON) & FOM  
  • Extremely low switching loss
  •  Excellent stability and uniformity

Applications   

  • LED lighting
  • Adapter
  • Telecom 
  • Server
  • Solar/UPS

 

Key Performance Parameters

Parameter

Value

Unit

VDS, min @ Tj(max)

600

V

ID, pulse

156

A

RDS(ON), max @ VGS =10V

58

Qg

83

nC

 

Marking Information

Product Name

Package

Marking

OSG60R060H4T3ZF

TO247-L

OSG60R060H4T3Z

 

Package & Pin Information

 

 

 

Package

TO-247

Cfg.

N

VDS (V)

600

VGS (V)

30

ID (A) && Tc=25℃

52

Vth_typ(V)

4

Ron (Ω) && 10V

58

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