General Description
FSMOS® MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics . The high Vth series is specially designed to use in motor control systems with driving voltage of more than 10V .
Features
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Applications
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Key Performance Parameters
Parameter |
Value |
Unit |
VDS |
150 |
V |
ID, pulse |
720 |
A |
RDS(ON), max @ VGS =10V |
7 |
mΩ |
Qg |
107 |
nC |
Marking Information
Product Name |
Package |
Marking |
SFS15R07PNF |
TO-220-3L |
SFS15R07PN |
Package & Pin Information
Performance Parameters
Package
TO-220-3L
Cfg.
N
VDS (V)
150
VGS (V)
20
ID (A) && Tc=25℃
180
Ron (Ω) && 10V
0.007
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