General Description
FSMOS® MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics . The high Vth series is specially designed to use in motor control systems with driving voltage of more than 10V .
Features
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Applications
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Key Performance Parameters
Parameter |
Value |
Unit |
VDS |
80 |
V |
ID, pulse |
520 |
A |
RDS(ON), max @ VGS =10V |
2.4 |
mΩ |
Qg |
62 |
nC |
PD |
132 |
W |
Marking Information
Product Name |
Package |
Marking |
SFS08R024UGNF |
PDFN5×6 |
SFS08R024UGN |
Package & Pin Information
Performance Parameters
Package
PDFN5*6
Cfg.
N
VDS (V)
80
VGS (V)
20
ID (A) && Tc=25℃
130
Ron (Ω) && 10V
0.0024
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