General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
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|
Applications
|
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Key Performance Parameters
|
Parameter |
Value |
Unit |
|
VDS, min @ Tj(max) |
950 |
V |
|
ID, pulse |
26 |
A |
|
RDS(ON), max @ VGS =10V |
250 |
mΩ |
|
Qg |
41 |
nC |
Marking Information
|
Product Name |
Package |
Marking |
|
OSG90R250FF |
TO200F |
OSG90R250F |
Package & Pin Information
Performance Parameters
Package
TO-220F
Cfg.
N
VDS (V)
950
VGS (V)
30
ID (A) && Tc=25℃
16
Ron (Ω) && 10V
0.25
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文件大小: 891.6KB
工业连接器
工业连接器
