General Description
OST75N65HEVF uses advanced Oriental-Semi’s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching
performance. This device is suitable for mid to high range switching frequency converters.
Features
|
|
Applications
|
|
Key Performance Parameters
Parameter |
Value |
Unit |
|
VCES, min @ 25°C |
650 |
V |
|
Maximum junction temperature |
175 |
°C |
|
IC, pulse |
300 |
A |
|
VCE(sat), typ @ |
VGE =15V |
1.45 |
V |
Qg |
235 |
nC |
Marking Information
Product Name |
Package |
Marking |
OST75N65HEVF |
TO247 |
OST75N65HEVF |
Package & Pin Information
Performance Parameters
Package
TO-247
VGE (V)
20
BV (V)
650
IC (A) && Tc=25℃
90
Vth_typ(V)
4.5
Von(V) && Vcesat
5.5
Von(V) && Vf
1.35
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