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General Description

OST50N65KTMF uses advanced Oriental-Semi’s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching 
performance. This device is suitable for mid to high range switching frequency converters.

 

Features       

  • Advanced TGBTTM technology
  • Excellent conduction and switching loss
  • Excellent stability and uniformity
  • Fast and soft antiparallel diode

 

Applications   

  • Induction converters
  •  Uninterruptible power supplies

 

Key Performance Parameters

Parameter

Value

Unit

VCES, min @ 25°C

650

V

Maximum junction temperature

175

°C

IC, pulse

222

A

VCE(sat), typ @

VGE =15V

1.65

V

Qg

78

nC

 

Marking Information

Product Name

Package

Marking

OST50N65KTMF

TO263

OST50N65KTM

 

Package & Pin Information

    

Package

TO-263

VGE (V)

20

BV (V)

650

IC (A) && Tc=25℃

80

Vth_typ(V)

5.0

Von(V) && Vcesat

1.85

Von(V) && Vf

2.05

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