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General Description

The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS® SuperSi series is based on Oriental Semiconductor’s unique device design to achieve extremely fast switching characteristics. It is the perfect replacement for the Gallium Nitride (GaN) device in high frequency operations with better ruggedness and cost. It is targeted to meet the most aggressive efficiency standards of power supply systems by pushing both performance and power density to extreme limits.

 

Features       

  • Low RDS(ON) & FOM  
  • Extremely low switching loss
  •  Excellent stability and uniformity

Applications   

  • LED lighting
  • PC power
  • Telecom power 
  • Server power
  • Solar/UPS
  • EV Charger

 

Key Performance Parameters

Parameter

Value

Unit

VDS

600

V

ID, pulse

108

A

RDS(ON), max @ VGS =10V

70

Qg

36

nC

 

Marking Information

Product Name

Package

Marking

OSS60R070HZF

TO247

OSS60R070HZ

 

Package & Pin Information

 

 

 

Package

PDFN8*8

Cfg.

N

VDS (V)

600

VGS (V)

30

ID (A) && Tc=25℃

32

Vth_typ(V)

4.5

Ron (Ω) && 10V

70

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