General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.
Features
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|
Applications
|
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Key Performance Parameters
|
Parameter |
Value |
Unit |
|
VDS, min @ Tj(max) |
600 |
V |
|
ID, pulse |
156 |
A |
|
RDS(ON), max @ VGS =10V |
58 |
mΩ |
|
Qg |
83 |
nC |
Marking Information
|
Product Name |
Package |
Marking |
|
OSG60R060H4T3ZF |
TO247-L |
OSG60R060H4T3Z |
Package & Pin Information
Performance Parameters
Package
TO-247
Cfg.
N
VDS (V)
600
VGS (V)
30
ID (A) && Tc=25℃
52
Vth_typ(V)
4
Ron (Ω) && 10V
58
Ron (Ω) && 4.5V
-
文件大小: 881.0KB
工业连接器
工业连接器
