General Description
FSMOS® MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics . The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.
Features
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|
Applications
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Key Performance Parameters
|
Parameter |
Value |
Unit |
|
VDS, min |
25 |
V |
|
ID, pulse |
800 |
A |
|
RDS(ON) , max @ VGS=10V |
1.5 |
mΩ |
|
Qg |
114 |
nC |
Marking Information
|
Product Name |
Package |
Marking |
|
SFSE2R015GF |
PDFN5*6 |
SFSE2R015G |
Package & Pin Information
Performance Parameters
Package
PDFN5*6
Cfg.
N
VDS (V)
25
VGS (V)
20
ID (A) && Tc=25℃
200
Ron (Ω) && 10V
0.0015
-
文件大小: 928.2KB
工业连接器
工业连接器
