General Description
FSMOS® MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics . The high Vth series is specially designed to use in motor control systems with driving voltage of more than 10V .
Features
Low RDS(ON) & FOM
Extremely low switching loss
Excellent reliability and uniformity
Fast switching and soft recovery
Applications
PD charger
Motor driver
Switching voltage regulator
DC-DC convertor
Switching mode power supply
Key Performance Parameters
|
Parameter |
Value |
Unit |
|
VDS |
150 |
V |
|
ID, pulse |
720 |
A |
|
RDS(ON), max @ VGS =10V |
7 |
mΩ |
|
Qg |
107 |
nC |
Marking Information
|
Product Name |
Package |
Marking |
|
SFS15R07PNF |
TO-220-3L |
SFS15R07PN |
Package & Pin information
Absolute Maximum Ratings at Tj =25°C unless otherwise noted
|
Parameter |
Symbol |
Value |
Unit |
|
Drain-source voltage |
VDS |
150 |
V |
|
Gate-source voltage |
VGS |
±20 |
V |
|
Continuous drain current1) , TC=25 °C |
ID |
180 |
A |
|
Pulsed drain current2) , TC=25 °C |
ID, pulse |
720 |
A |
|
Continuous diode forward current1) , TC=25 °C |
IS |
180 |
A |
|
Diode pulsed current2) , TC=25 °C |
IS, pulse |
720 |
A |
|
Power dissipation3), TC=25 °C |
PD |
450 |
W |
|
Single pulsed avalanche energy5) |
EAS |
118 |
mJ |
|
Operation and storage temperature |
Tstg , Tj |
-55 to 150 |
°C |
Thermal Characteristics
|
Parameter |
Symbol |
Value |
Unit |
|
Thermal resistance, junction-case |
RθJC |
0.27 |
°C/W |
|
Thermal resistance, junction-ambient4) |
RθJA |
62 |
°C/W |
Electrical Characteristics at Tj =25°C unless otherwise specified
|
Parameter |
Symbol |
Min. |
Typ. |
Max. |
Unit |
Test condition |
|
Drain-source breakdown voltage |
BVDSS |
150 |
|
|
V |
VGS =0 V, ID =250 μA |
|
Gate threshold voltage |
VGS(th) |
3 |
|
4.5 |
V |
VDS =VGS , ID =250 μA |
|
Drain-source on-state resistance |
RDS(ON) |
|
4.4 |
7 |
mΩ |
VGS =10 V, ID=60 A |
|
Gate-source leakage current |
IGSS |
|
|
100 |
nA |
VGS =20 V |
|
|
|
- 100 |
VGS =-20 V |
|||
|
Drain-source leakage current |
IDSS |
|
|
1 |
μA |
VDS =120 V, VGS =0 V |
|
Gate resistance |
RG |
|
1.7 |
|
Ω |
ƒ=1 MHz, Open drain |
Dynamic Characteristics
|
Parameter |
Symbol |
Min. |
Typ. |
Max. |
Unit |
Test condition |
|
Input capacitance |
Ciss |
|
7010 |
|
pF |
VGS =0 V, VDS =25 V, ƒ=100 kHz |
|
Output capacitance |
Coss |
|
4240 |
|
pF |
|
|
Reverse transfer capacitance |
Crss |
|
158 |
|
pF |
|
|
Turn-on delay time |
td(on) |
|
26 |
|
ns |
VGS =10 V, VDS =80 V, RG=2 Ω, ID=40 A |
|
Rise time |
tr |
|
23 |
|
ns |
|
|
Turn-off delay time |
td(off) |
|
46 |
|
ns |
|
|
Fall time |
tf |
|
17 |
|
ns |
Gate Charge Characteristics
|
Parameter |
Symbol |
Min. |
Typ. |
Max. |
Unit |
Test condition |
|
Total gate charge |
Qg |
|
107 |
|
nC |
VGS =10 V, VDS =80 V, ID=40A |
|
Gate-source charge |
Qgs |
|
37 |
|
nC |
|
|
Gate-drain charge |
Qgd |
|
17 |
|
nC |
|
|
Gate plateau voltage |
Vplateau |
|
5.6 |
|
V |
Body Diode Characteristics
|
Parameter |
Symbol |
Min. |
Typ. |
Max. |
Unit |
Test condition |
|
Diode forward voltage |
VSD |
|
|
1.3 |
V |
IS=20 A, VGS =0 V |
|
Reverse recovery time |
trr |
|
145 |
|
ns |
VR=80 V, IS=40 A, di/dt=100 A/μs |
|
Reverse recovery charge |
Qrr |
|
463 |
|
nC |
|
|
Peak reverse recovery current |
Irrm |
|
5.8 |
|
A |
Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) VDD=50V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.
Performance Parameters
Package
TO-220-3L
Cfg.
N
VDS (V)
150
VGS (V)
20
ID (A) && Tc=25℃
180
Ron (Ω) && 10V
0.007
-
文件大小: 920.5KB
工业连接器
工业连接器
