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General Description

FSMOS® MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON) ,low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.

 

Features       

  • Low RDS(ON) & FOM  
  • Extremely low switching loss
  •  Excellent stability and uniformity
  •  Fast switching and soft recovery

 

Applications   

  • Inverter
  • Motor driver
  • Battery protection
  • DC-DC convertor
  • Switching mode power supply
  •  UPS

 

Key Performance Parameters

Parameter

Value

Unit

VDS

80

V

ID, pulse

520

A

RDS(ON), max @ VGS =10V

2.4

Qg

73.8

nC

 

Marking Information

Product Name

Package

Marking

SFS08R024UGF

PDFN5×6

SFS08R024UG

Package & Pin Information

    

Package

PDFN5*6

Cfg.

N

VDS (V)

80

VGS (V)

20

ID (A) && Tc=25℃

130

Ron (Ω) && 10V

0.0024

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