General Description
FSMOS® MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics . The high Vth series is specially designed to use in motor control systems with driving voltage of more than 10V .
Features
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|
Applications
|
|
Key Performance Parameters
|
Parameter |
Value |
Unit |
|
VDS |
80 |
V |
|
ID, pulse |
1600 |
A |
|
RDS(ON), max @ VGS =10V |
1.3 |
mΩ |
|
Qg |
166 |
nC |
Marking Information
|
Product Name |
Package |
Marking |
|
SFS08R013K7NF |
TO263-6L |
SFS08R013K7N |
Package & Pin Information
Performance Parameters
Package
TO263-6L
Cfg.
N
VDS (V)
80
VGS (V)
20
ID (A) && Tc=25℃
400
Ron (Ω) && 10V
0.0013
-
文件大小: 923.3KB
工业连接器
工业连接器
