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General Description

FSMOS® MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially designed to use in motor control systems with driving voltage of more than 10V.

 

Features       

  • Low RDS(ON) & FOM  
  • Extremely low switching loss
  •  Excellent stability and uniformity
  •  Fast switching and soft recovery

 

Applications   

  • PD Charger
  • Motor driver
  • DC-DC convertor
  • Switching mode power supply
  • Switching voltage regulator

 

Key Performance Parameters

Parameter

Value

Unit

VDS

100

V

ID, pulse

960

A

RDS(ON), max @ VGS =10V

2.1

Qg

107

nC

 

Marking Information

Product Name

Package

Marking

SFS10R021K7NF

TO263-6L

SFS10R021K7N

Package & Pin Information

    

Package

TO263-6L

Cfg.

N

VDS (V)

100

VGS (V)

20

ID (A) && Tc=25℃

270

Ron (Ω) && 10V

0.0021

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