General Description
FSMOS® MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially designed to use in motor control systems with driving voltage of more than 10V.
Features
|
|
Applications
|
|
Key Performance Parameters
|
Parameter |
Value |
Unit |
|
VDS |
100 |
V |
|
ID, pulse |
960 |
A |
|
RDS(ON), max @ VGS =10V |
2.1 |
mΩ |
|
Qg |
107 |
nC |
Marking Information
|
Product Name |
Package |
Marking |
|
SFS10R021K7NF |
TO263-6L |
SFS10R021K7N |
Package & Pin Information
Performance Parameters
Package
TO263-6L
Cfg.
N
VDS (V)
100
VGS (V)
20
ID (A) && Tc=25℃
270
Ron (Ω) && 10V
0.0021
-
文件大小: 886.0KB
工业连接器
工业连接器
